发明名称 PRODUCTION OF ZINC OXIDE FILM, PRODUCTION OF PHOTOVOLTAIC ELEMENT AND PRODUCTION OF SEMICONDUCTOR DEVICE SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To produce at low cost a solar cell high in efficiency by forming in a short time and stably a zinc oxide film having an excellent optical confinement effect and using the film as the photovoltaic element. SOLUTION: In the production method of the zinc oxide film forming the zinc oxide film on the conductive substrate 103 by energizing between a conductive substrate 103 immersed in an electrodeposition bath 104 and a counter electrode 105 immersed in the electrodeposition bath 104, the temp. of the electrodeposition bath is kept at >=50 deg.C, and a temp. profile in which the temp. of the electrodeposition bath at a final stage of the electrodeposition is lower than that at an initial stage is given.
申请公布号 JPH11264093(A) 申请公布日期 1999.09.28
申请号 JP19990000876 申请日期 1999.01.06
申请人 CANON INC 发明人 NISHIO YUTAKA
分类号 C25D9/04;C25D9/08;H01L21/288;H01L31/04 主分类号 C25D9/04
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