发明名称 PROCESS CONTROL SYSTEM AND FOCUED ION BEAM DEVICE
摘要 PROBLEM TO BE SOLVED: To realize the stable operation of a semiconductor process by precisely measuring the film thickness of a wafer internal device in a short time and quickly performing the feedback to the process. SOLUTION: This system is formed of an FIB device 1 capable of sampling an analyzing part from a semiconductor wafer without breaking the wafer, a STEM 2, a small-sized sample table commonly mountable on a wafer holder for FIB and a sample holder for STEM, a computer 3 having a data base software, and a network 5 for mutually connecting the FIB, the STEM, and the computer, so that the film thickness in a wafer can be precisely, quickly and surely measured.
申请公布号 JPH11265679(A) 申请公布日期 1999.09.28
申请号 JP19980068513 申请日期 1998.03.18
申请人 HITACHI LTD 发明人 ONISHI TAKESHI;KOIKE HIDEMI
分类号 H01J37/28;G01B21/30;H01J37/305 主分类号 H01J37/28
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