| 摘要 |
PROBLEM TO BE SOLVED: To reduce the generation of a reverse saturation current in a shadow region, due to a potential difference between semiconductor layers which form a P-N junction. SOLUTION: N-type semiconductor layers 2, which form a P-N junction, are provided on the light incidence surface of a P-type substrate 1, consisting of a crystalline silicon film and grid electrode parts 31 of an incident surface electrode 3 are connected with the layers 2. Moreover, main electrode parts 32, which are connected with a plurality of the grid electrode parts 31 and shield the sunlight of the electrode 3 are formed on the light incident surface of the substrate 1. An insulator layer 8 is formed on the region, where is formed with the main electrodes 32 and is not formed with the layers 2 of the substrate 1. Moreover, the layers 2 are covered with a passivation film 4 and an antireflection film 5. A P<+> -type semiconductor layer 6 of a P-type dopant concentration higher than that in the substrate 1 is formed on the rear on a side opposite to the light incident surface of the substrate 1 and a rear electrode 7 is formed on the rear of the layer 6. |
