| 摘要 |
PROBLEM TO BE SOLVED: To form a sure gate conductor which is lessened in thickness and sheet resistance, by a method wherein a metal silicide layer doped with dopant in situ is deposited on a doped polysilicon layer. SOLUTION: A thin gate oxide layer 220 is formed on the surface of a substrate 201, a polysilicon layer 230 is deposited thereon through a chemical deposition method. Typically, the polysilicon layer 330 contains dopant so as to be lessened in resistivity. Then, a metal silicide layer 240 is deposited on the polysilicon layer 230. The silicide layer 240 which is doped so as to be used as a dopant source is provided, whereby a polysilicon layer can be formed being lower in dopant concentration than that which generates a metal-rich boundary surface. Therefore, a polysilicon layer of a gate stack is more enhanced in dopant concentration without being increased in thickness so as to avoid a metal-rich boundary surface, and the sure gate stack lessened in sheet resistance can be obtained. |
