| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing mathod, which protects an electronic circuit from surge. SOLUTION: A semiconductor device is provided with a p-type semiconductor substrate 13, and insulator 14 encircling an SOI layer 111 and formed on the semiconductor substrate 13, a bonding pad 121 conductive to the SOI layer 111 through the intermediary of a wiring 113, and a bonding region 12 including the bonding pad 121 and a hole 122 having a bottom face wherein the bonding pad 121 and the semisonductor substrate 13 are exposed, further a bonding wire 3 is bonded onto the bonding region 12. |
