| 摘要 |
PROBLEM TO BE SOLVED: To make connection strength increased between a metal thin wire and a bonding pad. SOLUTION: In this semiconductor device, in which a bonding pad 12 for connecting a metal thin wire by wire bond connection is formed on a semiconductor substrate 11, the semiconductor device is structured in a recessed structure 16 in which a peripheral part 122 of the boding pad 12 are projected further from a central part 124. |
