发明名称 |
CMOS INTEGRATION SENSOR WITH FULLY DIFFERENTIAL COLUMN READOUT CIRCUIT FOR LIGHT ADAPTIVE IMAGING |
摘要 |
An imager (10) that is better suited for low-light detection capability. In accordance with a preferred embodiment, the imager may be easily configured to provide an imager (10) having multi-resolution capability where SNR can be adjusted for optimum low-level detectibility. Multi-resolution signal processing functionality is provided on-chip to achieve high speed imaging, employs an improved pixel binning approach with fully differential circuits situated so that all extraneous and pick-up noise is eliminated. The current implementation requires no frame transfer memory, thereby reducing chip size. The reduction in area enables larger area format light adaptive imager implementations.
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申请公布号 |
WO9948281(A1) |
申请公布日期 |
1999.09.23 |
申请号 |
WO1999US05830 |
申请日期 |
1999.03.16 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
PAIN, BEDABRATA;ZHOU, ZHIMIN;FOSSUM, ERIC, R. |
分类号 |
H04N5/335;H04N3/15;(IPC1-7):H04N3/14 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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