发明名称 |
Semiconductor memory device |
摘要 |
<p>A semiconductor memory device comprises a plurality of sub bit lines (12a) and (12b) to which a plurality of memory cell transistors (13a) through (13h) are connected. The sub bit lines are selectively connected to a main bit line (11a). The sub and main bit lines are made of metallic material. <IMAGE></p> |
申请公布号 |
EP0944090(A2) |
申请公布日期 |
1999.09.22 |
申请号 |
EP19990250084 |
申请日期 |
1999.03.19 |
申请人 |
NEC CORPORATION |
发明人 |
AMANAI, MASAKZU;KOBATAKE, HIROYUKI;OKU, SATORU;KATO, KAZUAKI;KANEKO, MASAKI |
分类号 |
G11C7/18;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C7/00;G11C16/00 |
主分类号 |
G11C7/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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