发明名称 Semiconductor memory device
摘要 <p>A semiconductor memory device comprises a plurality of sub bit lines (12a) and (12b) to which a plurality of memory cell transistors (13a) through (13h) are connected. The sub bit lines are selectively connected to a main bit line (11a). The sub and main bit lines are made of metallic material. &lt;IMAGE&gt;</p>
申请公布号 EP0944090(A2) 申请公布日期 1999.09.22
申请号 EP19990250084 申请日期 1999.03.19
申请人 NEC CORPORATION 发明人 AMANAI, MASAKZU;KOBATAKE, HIROYUKI;OKU, SATORU;KATO, KAZUAKI;KANEKO, MASAKI
分类号 G11C7/18;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C7/00;G11C16/00 主分类号 G11C7/18
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