发明名称 SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM
摘要 <p>A substrate processing system, a substrate processing method, and a storage medium are provided to remove foreign materials from a substrate transferring unit by injecting high-temperature gas into the substrate transferring unit. A substrate processing system(1) includes at least a substrate processing unit(2) for processing a substrate and a substrate transferring unit(3) for transferring the substrate. A method for processing the substrate includes an injection process for injecting high-temperature gas into at least one of the substrate transferring unit and the substrate transferred by the substrate transferring unit. In the injection process, the high-temperature gas is injected into the substrate transferring unit before the substrate is transferred by the substrate transferring unit. In the substrate processing method, the high-temperature gas causes thermal stress on foreign matters attached to one of the substrate transferring unit and the substrate transferred by the substrate transferring unit.</p>
申请公布号 KR20070087495(A) 申请公布日期 2007.08.28
申请号 KR20070014540 申请日期 2007.02.12
申请人 TOKYO ELECTRON LIMITED 发明人 MORIYA TSUYOSHI;NAGASEKI KAZUYA
分类号 H01L21/304;H01L21/677 主分类号 H01L21/304
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