| 摘要 |
A semiconductor-chip (11) is bonded to a chip-carrier substrate (12) by way of a gold-to-gold bonding interface. A vacuum chuck (63) is provided to physically hold the semiconductor-chip (11) in physical contact with the chip-carrier substrate (12) as static force (61), ultrasonic power, and an elevated temperature are applied to two mating gold surfaces that are formed by two continuous and physically mating gold layers. The bonded assembly is encased in potting ceramic, or the bonded assembly is encased in a housing that includes a transparent cover that enables use as an optoelectronic semiconductor device. |
