| 发明名称 |
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| 摘要 |
The all epitaxial process starts with a high resistivity silicon substrate. Alternating layers of silicon and silicon-germanium are epitaxially grown on the substrate under conditions which create a region with misfit dislocations. A low resistivity silicon layer is then grown over the region. The material is inverted such that the high resistivity layer can be used to form the base of the device. The thickness of the high resistivity layer is adjusted to equal the width of the base of the semiconductor device to be fabricated. |
| 申请公布号 |
JP2948449(B2) |
申请公布日期 |
1999.09.13 |
| 申请号 |
JP19930225490 |
申请日期 |
1993.09.10 |
| 申请人 |
JII AI CORP |
发明人 |
BIREMU JII AINTOOFUEN;JOSEFU WAI CHAN;DENISU GAABISU |
| 分类号 |
H01L21/28;H01L21/20;H01L21/304;H01L21/331;H01L29/161;H01L29/41;H01L29/417;H01L29/73;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/28 |
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