发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device having the structure of a semiconductor package with chip size package(CSP), which reduces the thermal stresses of primary and secondary connection terminals is improved in reflow resistance and temperature resistance cycle performance, and is adaptive to multiple-pin constitution and its manufacture. SOLUTION: A semiconductor device is constituted by mounting a spacer 9 on an active surface of a semiconductor chip with solder bumps across an adhesive, mounting the wiring surface of a film substrate 3 on the spacer 9, electrically connecting terminal on the wiring surface of the film substrate 3 and solder bumps on the semiconductor chip 1, and forming the solder bumps on the opposite surface from the wiring surface of the film substrate 3. Consequently, since the spacer 9 and film substrate 3 are not adhered directly thermal stresses due to the difference in coefficients of thermal expansion between the semiconductor chip 1 and a mother board at mother board mounting are not received directly by the bumps mounted on the film substrate 3, and reliability such as temperature-resistance cycle performance can be made improved.
申请公布号 JPH11243116(A) 申请公布日期 1999.09.07
申请号 JP19980045142 申请日期 1998.02.26
申请人 HITACHI CHEM CO LTD 发明人 KURABUCHI KAZUHIKO
分类号 H01L21/60;H01L23/12;H01L23/50;(IPC1-7):H01L21/60 主分类号 H01L21/60
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