发明名称 Laminated film/metal structures
摘要 A process for producing laminated film/metal structures comprising bumped circuit traces on a non-conductive substrate wherein a copper sheet/polyimide film laminate is coated with resist on the exterior surfaces. The resist adjacent the polyimide film is selectively exposed and etched to expose an area of the polyimide film. The exposed polyimide film is etched to form vias through the polyimide film to the inner side of the copper sheet. The resist adjacent the polyimide film is stripped away and a metal bump is electrolytically plated through each via onto the copper sheet. A subsequent layer of resist is electrophoretically applied over the bumps. The resist material adjacent the copper sheet is then selectively exposed and etched to expose areas of the copper sheet. The exposed copper sheet is etched to form circuit traces and the remaining resist adjacent both the polyimide film and the copper sheet is stripped away.
申请公布号 US5949141(A) 申请公布日期 1999.09.07
申请号 US19970898099 申请日期 1997.07.22
申请人 MICRON TECHNOLOGY, INC. 发明人 FARNWORTH, WARREN M.;HEMBREE, DAVID R.
分类号 H01L21/48;H05K3/00;H05K3/06;H05K3/40;H05K3/42;(IPC1-7):H01L23/48 主分类号 H01L21/48
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