Process for fabricating semiconductor device having semiconductor layers epitaxially grown from active areas without short-circuit on field insulating layer

摘要

A memory cell of a semiconductor dynamic random access memory device requires a bit line contact hole open to a drain region of a cell transistor for connecting a bit line to the drain region and a node contact hole open to a source region for connecting a storage electrode of a stacked capacitor to the source region, and the bit line contact hole and the node contact hole are plugged with silicon layers; the silicon layers are epitaxially grown from the source and drain regions over an oxide-encapsulated gate electrode of the cell transistor so as to increase the contact areas; and the silicon layers are firstly anisotropically grown until reaching the upper surface of the oxide-encapsulated gate electrode, and, thereafter, isotropically grown so as to increase the contact areas.