发明名称 Cathode arc vapor deposition
摘要 The present invention relates to an apparatus and method for enhancement of the stream of plasma particles created by the process of cathode arc vapor deposition. The apparatus is designed to control through trapping the plasma particles generated from a sacrificial cathode plasma source and focus the plasma particle stream to collide with and deposit upon the substrate to be coated. The apparatus includes a magnetic field generator for generating a magnetic field of a distinctive cusp shape. The anode is insulated from the chamber to strengthen and sharpen the electric field potential created in the chamber. This stronger, sharper electric field potential is contoured to create an electron trap having an aperture through which the plasma ions are directed at the substrate to be coated. The specific configuration described directs the plasma particles efficiently in that the plasma deposition rate is higher per unit of magnetic field strength than can be obtained with other commercial designs. In addition, a smoother, more stable arc discharge per unit of applied electric current to the system is possible. The distinctive electric field potential created by the instant invention results in a more enhanced stream of vaporized source material, which improves the quality and corrosion resistance of the product coatings. A more stable cathode arc discharge is also possible.
申请公布号 AU2587699(A) 申请公布日期 1999.08.30
申请号 AU19990025876 申请日期 1999.02.05
申请人 PHYGEN, INC. 发明人 VIKTOR KHOMINICH
分类号 C23C14/32;H01J37/32 主分类号 C23C14/32
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