| 摘要 |
<p>The method entails defining a first memory location contg. a known value forming a soft fuse value and a second memory location contg. the lock bits, reading the contents of the first memory location to determine a read-out contents, comparing the read-out contents of the first memory location to the soft fuse value, allowing setting and resetting of individual lock bits if the read-out contents do not correspond to the soft fuse value and allowing setting and disallowing resetting of individual lock bits if the read-out contents correspond to the soft fuse value. The defining comprises partitioning the first and second memory locations within the memory array and providing an additional memory word of the memory array as the first memory location using non-volatile storage device comprising FRAM IC.</p> |
