发明名称 |
Integrated circuit having, and process providing, different oxide layer thicknesses on a substrate |
摘要 |
An integrated circuit ("IC") having three different oxide layer thicknesses and a process for manufacturing the IC using a single oxide growth step is provided. A first region is formed on a substrate surface with oxidation enhancing properties. A second region is formed on the substrate surface with a dose of nitrogen that retards oxidation. An oxide layer is grown from the first and the second regions and a third region of the substrate such that the first, second, and third regions yield a first oxide layer for the capacitor, a second oxide layer for the read transistor and a third oxide layer for the write transistor.
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申请公布号 |
US5942780(A) |
申请公布日期 |
1999.08.24 |
申请号 |
US19960689523 |
申请日期 |
1996.08.09 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BARSAN, RADU M.;LI, XIAO-YU;MEHTA, SUNIL |
分类号 |
H01L21/8247;H01L27/115;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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