Method of forming passivation layer in semiconductor device

摘要

Provided is a method of forming a passivation layer of a semiconductor device, using a high density plasma-enhanced chemical vapor deposition (HDPCVD) in order to form an excellent film without a void between metal lines which are being narrower. During the process of HDPCVD that utilizes SiH₄ and O₂ gas as an reaction gas, a first insulation film is formed along the surface of an overall structure including metal lines in a low biasing power and a second insulation film is formed on the first insulation film in a high biasing power enough to bury the spaces between the metal lines. Thus, it is possible to fill up (i.e., gap-filling) the spaces between the metal lines with the second insulation film without a void, and to prevent a junction leakage current due to an inflow of charges into the metal lines due to the plasma because the first insulation film protects the metal lines from damages by the gaseous plasma generated while forming the second insulation film.