| 摘要 |
PROBLEM TO BE SOLVED: To form a film at a high speed by the high-power sputtering by specifying the total composition ratio and making a metal Pb, the La-Zr-Ti oxide phase, and the Zr-Ti oxide phase as the constituted phase. SOLUTION: A sputtering target has the composition of Pb1+m-x Lax Zry Ti1-y Oz (0<=m<=2, 0<x<0.3, 0.2<y<0.8, 1<=z<=2.5). The volumetric ratio of the metal Pb to the whole volume of the sputtering target for forming a dielectric thin film is >=45%, the metal Pb powder, the La-Zr-Ti oxide powder and the Zr-Ti oxide powder are mixed and formed into a prescribed shape, and preferably sintered under the pressure at a temperature of not higher than the melting point of Pb in the vacuum or inert atmosphere. The thin film formed on a substrate using the target material is high in occupation ratio of the metal Pb at the erosion surface of the material, the discharge during the sputtering is stable, and the composition of the thin film is stable. |
