| 摘要 |
<p>An electronically scanned antenna (20) that is manufactured using semiconductor material and device fabrication technology. The antenna (20) has a semiconductor substrate (13) having a plurality of stubs (15) projecting from one surface. The semiconductor substrate may be silicon, gallium arsenide, or indium phosphide, for example. A first conductive layer (11) formed on the surfaces of the semiconductor substrate (13) and along sides of the stubs so that the stubs (15) are open at their terminus. The conductive layers (11, 12) form a parallel plate waveguide region (14). A diode array (21) having a plurality of diode elements is formed in the semiconductor substrate (13) that are disposed transversely across the semiconductor substrate (13) and longitudinally down the semiconductor substrate (13) between selected ones of the plurality of stubs (15). The diode array (21) may comprise an array of Schottky or varactor diodes, for example. The diode array (21) provides a voltage variable capacitive reactance in selective regions of the waveguide region (14). A beam steering computer (25) is coupled to the plurality of diode elements of the diode array (21) which controls the voltage applied thereto to control steering of a beam radiated by the antenna (20). <IMAGE></p> |
