| 摘要 |
This invention relates to an electron beam exposure apparatus which draws a pattern by accelerating an electron beam emitted by an electron source using an acceleration electrode, and irradiating the electron beam onto a wafer placed on a stage. Deviations DDX and DDY between the irradiated position of the electron beam with respect to the stage at a first acceleration voltage, and that at a second acceleration voltage higher than the first acceleration voltage are detected. The positional relationship between the wafer and the irradiated position of the electron beam with respect to the wafer at the second acceleration voltage is detected. Based on the deviations DDX and DDY and the positional relationship, the positional relationship between the wafer and the irradiated position of the electron beam with respect to the wafer at the first acceleration voltage is calculated.
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