| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of the ferroelectric film of a memory element of a structure, wherein the ferroelectric film is used as a capacitor insulating film by a method in which an organic film is used as an insulating film and a passivation film, which are formed on the upper part of a capacitor. SOLUTION: A ferroelectric layer 4 is used as a capacitor insulating film of a capacotpr 101 and at the same time, an organic film is used as an insulating film 6 and a surface protective film 8, which are formed in a process later than that of forming the layer 4. Since the internal stresses of the organic film can be made low and H atoms contained in polyimide molecules in the protective film are bonded strongly with other taoms, such as C atoms, by covalent bonds, hydrogen molecules and hydrogen atoms will not be generated from the polyimide molecules in the organic film after the organic film once is formed. Owing to this, hydrogen molecules and hydrogen atoms can be prevented from being generated from the films 6 and 8 and diffusing in the layer 4. Moreover, since it is possible for the organic film to be formed by coating and annealing, the organic film can be formed at a low temperature and the thermal deterioration of the layer 4 can be prevented from occurring. |
