发明名称 OPTOELECTRONIC SEMICONDUCTOR DEVICES
摘要 An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (beta-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mum. Photodetector devices are also described
申请公布号 EP0934604(A1) 申请公布日期 1999.08.11
申请号 EP19970909487 申请日期 1997.10.22
申请人 UNIVERSITY OF SURREY 发明人 LEONG, DANIEL;HARRY, MILTON, ANTHONY;HOMEWOOD, KEVIN;REESON, KAREN, JOY
分类号 H01L31/103;H01L31/068;H01L31/107;H01L31/108;H01L33/00;H01L33/34 主分类号 H01L31/103
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