发明名称 Self-aligned pattern over a reflective layer
摘要 An opening in an insulator on a substrate is self-aligned to a reflective region on the substrate. The opening is formed by shining blanket radiation on photoresist on the insulator and developing to open the resist and insulator. The resist region that is above the reflective region absorbs both incident and reflected radiation, a larger total dose of radiation than is absorbed by resist above non-reflective regions. The incident dose is adjusted to provide a below threshold dose everywhere except to those regions of resist that are above highly reflective regions.
申请公布号 US5935763(A) 申请公布日期 1999.08.10
申请号 US19960664283 申请日期 1996.06.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CATERER, MICHAEL DEAN;DAUBENSPECK, TIMOTHY HARRISON;FERENCE, THOMAS GEORGE;SPROGIS, EDMUND JURIS
分类号 G03F7/00;G03F7/20;H01L21/60;H01L21/768;(IPC1-7):G03F7/00 主分类号 G03F7/00
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