| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device, with which power consumption can be reduced by a method wherein the control signal of a sub- amplifier circuit is easily matched to a column selection line signal, and the sub-amplifier circuit of a non-selective memory mat is stopped. SOLUTION: This semiconductor memory device is a DRAM of 64M but which uses a hierarchical input/output line configuration, and it is constituted of a main row decoder region, a main word driver region, a column decoder region, a circumferential circuit/bonding pad region, a memory cell array region, a sensing amplifier region, a sub-word driven region, and an intersection point region, etc. A sub-amplifier circuit 9 is arranged on the intersection point region 8 between a sensing amplifier region 6 and the sub-word driver region 7. A control signal DREADT of the sub-amplifier circuit 9 is inputted from the side of the column dweller region 3, in order to have the same pass between the control signal DREADT of the sub-amplifier circuit 9 and the signal of the column selective line YS, and a mat non-selective signal BLEQ is logically treated so that the non-selective sub-amplifier circuit 9 is not activated. |
