发明名称 FIELD-EFFECT TRANSISTOR
摘要 <p>PROBLEM TO BE SOLVED: To provide with a small number of item parts a field-effect transistor(FET) which has superior electrical characteristics. SOLUTION: An insulation ceramic part 12 is extended toward a FET chip 15, a metalized open stub 17 is formed on its top surface and a capacitance component is added. The stub 17 is preferably divided into plural parts and they are selectively interconnected by a bonding wire 18. Consequently, it is possible to get an inexpensive FET that has a superior electrical characteristic with a small number of item parts and to adjust a capacitance component by correcting manufacturing dispersion as necessary.</p>
申请公布号 JPH11214903(A) 申请公布日期 1999.08.06
申请号 JP19980025130 申请日期 1998.01.22
申请人 NEC ENG LTD 发明人 SUGAWA KUNIHIKO;TANAKA MASAHIKO
分类号 H01L21/60;H01L21/338;H01L29/812;H01P5/08;(IPC1-7):H01P5/08 主分类号 H01L21/60
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