| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that does not cause a current failure between source and drain regions even when an active region and an insulation film for prescribing the active region could not be formed according to a layout design due to the thinning of the semiconductor device. SOLUTION: The shape of an active region 1 in terms of top view has a recessed part at its corner part. The active region 1 is surrounded by an insulation film 7. Then, a gate electrode 30 is arranged at a retreating region DR where an edge part is at a lower position due to the recessed part, and a gate electrode 20 is arranged at a normal region OR where the edge part projects from the retreating region DR. The length of the gate end cap (margin part) of the gate electrode 20 is (x) and the length of the gate end cap of the gate electrode 30 is x+α.
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