摘要 |
<p>A hollow cathode reactor (22) has two opposed RF cathodes (20, 21) with confining guard rings (27) and shields (28, 29). A glow discharge plasma (32) in the reactor (22) hydrogenates semiconductor material (25, 26) mounted adjacent to at least one cathode (20, 21). The plasma (32) has ion density greather than 1011/cm3 and generates ion implantation energies less than 80eV, thus yielding relatively high processing rates with low surface damage. Passivation characteristics can be controlled by varying gaps between the semiconductor material (25, 26) and the respective cathodes (20, 21). The reactor (22) can be scaled to accomodate large area substrates such as polycrystalline silicon solar cells. A plurality of n reactors (22) can be removably mounted in a common vacuum enclosure, for the simultaneous passivation of up to 2n substrates (25, 26).</p> |