发明名称 |
Film forming apparatus and method of forming a crystalline silicon film |
摘要 |
A film forming apparatus includes a silicon film forming vacuum chamber for forming a crystalline silicon film on a substrate; a film forming device provided for the vacuum chamber for forming a pre-film of the crystalline silicon film on a target surface of the substrate; and an energy beam irradiating device provided for the vacuum chamber for irradiating the pre-film with an energy beam for crystallizing the pre-film. This film forming apparatus produce a crystalline silicon film having a good quality as a semiconductor film for a TFT or the like with good productivity. |
申请公布号 |
EP0933451(A1) |
申请公布日期 |
1999.08.04 |
申请号 |
EP19990101538 |
申请日期 |
1999.01.29 |
申请人 |
NISSIN ELECTRIC CO., LTD. |
发明人 |
KIRIMURA, HIROYA;OGATA, KIYOSHI |
分类号 |
C23C16/24;C23C16/40;C23C16/54;C23C16/56;C30B25/10;H01L21/20;H01L21/203;H01L21/205 |
主分类号 |
C23C16/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|