发明名称 Film forming apparatus and method of forming a crystalline silicon film
摘要 A film forming apparatus includes a silicon film forming vacuum chamber for forming a crystalline silicon film on a substrate; a film forming device provided for the vacuum chamber for forming a pre-film of the crystalline silicon film on a target surface of the substrate; and an energy beam irradiating device provided for the vacuum chamber for irradiating the pre-film with an energy beam for crystallizing the pre-film. This film forming apparatus produce a crystalline silicon film having a good quality as a semiconductor film for a TFT or the like with good productivity.
申请公布号 EP0933451(A1) 申请公布日期 1999.08.04
申请号 EP19990101538 申请日期 1999.01.29
申请人 NISSIN ELECTRIC CO., LTD. 发明人 KIRIMURA, HIROYA;OGATA, KIYOSHI
分类号 C23C16/24;C23C16/40;C23C16/54;C23C16/56;C30B25/10;H01L21/20;H01L21/203;H01L21/205 主分类号 C23C16/24
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