发明名称 High-voltage transistor
摘要 In an active matrix electroluminescent display, a pixel containing a grounded conductive electric field shield between an EL cell and the switching electronics for the EL cell. In a method of fabricating the pixel, first, an EL cell switching circuit is formed, then an insulating layer is formed over the switching circuit and a conductive layer (the field shield) is formed over the insulating layer. A through hole is provided in the field shield such that an electrical connection can be made between the switching circuit and an EL cell. The EL cell is then conventionally formed on top of the shield layer. Consequently, the shield isolates the switching circuit from the EL cell and ensures that any electric fields produced in the EL cell do not interfere with the operation of the switching electronics. Furthermore, the switching circuitry for each cell contains two transistors; a low voltage MOS transistor and a high voltage MOS transistor. The low voltage transistor is controlled by signals on a data and a select line. When activated, the low voltage transistor activates the high voltage transistor by charging the gate of the high voltage transistor. This gate charge is stored between the gate electrode of the high voltage transistor and the electric field shield. Additionally, to improve the breakdown voltage of the high voltage transistor, a capacitive divider network is fabricated proximate the drift region of that transistor. As such, the network uniformly distributes an electric field over the drift region.
申请公布号 US5932892(A) 申请公布日期 1999.08.03
申请号 US19970993495 申请日期 1997.12.18
申请人 SARNOFF CORPORATION 发明人 HSEUH, FU-LUNG;IPRI, ALFRED CHARLES;DOLNY, GARY MARK;STEWART, ROGER GREEN
分类号 H01L29/786;G09G3/30;H01L27/088;H01L27/12;(IPC1-7):H01L29/04;H01L29/76 主分类号 H01L29/786
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