METHOD FOR FABRICATING MULTI-LAYER MOSFET,申请号KR19970004408-传众专利搜索

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发明名称	METHOD FOR FABRICATING MULTI-LAYER MOSFET
摘要
申请公布号	KR100214556(B1)	申请公布日期	1999.08.02
申请号	KR19970004408	申请日期	1997.02.14
申请人	HYUNDAI MICRO ELECTRONICS CO.,LTD.	发明人	KIM, GI-YONG
分类号	H01L21/335;(IPC1-7):H01L21/335	主分类号	H01L21/335
代理机构		代理人
主权项
地址

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