发明名称 |
Complementary Si/SiGe heterojunction bipolar technology |
摘要 |
A method of manufacturing truly complementary bipolar transistors on a common substrate. The method results in the fabrication of vertical NPN and PNP transistors which have an identical structure and mode of operation, with both devices operating in the downward direction. The inventive method permits independent control of the characteristics of the two devices, producing a closely matched performance for both devices.
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申请公布号 |
US5930635(A) |
申请公布日期 |
1999.07.27 |
申请号 |
US19970850610 |
申请日期 |
1997.05.02 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BASHIR, RASHID;HEBERT, FRANCOIS |
分类号 |
H01L21/8228;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/8228 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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