ANODE VANE STRUCTURE OF MAGNETRON,申请号KR19960017470U-传众专利搜索

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发明名称	ANODE VANE STRUCTURE OF MAGNETRON
摘要
申请公布号	KR200152107(Y1)	申请公布日期	1999.07.15
申请号	KR19960017470U	申请日期	1996.06.25
申请人	SAMSUNG ELECTRONICS CO, LTD.	发明人	PARK, KWANG-SU
分类号	H01J23/22;(IPC1-7):H01J23/22	主分类号	H01J23/22
代理机构		代理人
主权项
地址

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