发明名称 |
X-ray lithography resists |
摘要 |
Poly (diene sulfones) have superior properties as X-ray resists. Many poly (diene sulfones) have an X-ray sensitivity below about 50 mJ/cm2, and a glass transition temperature above about 70 DEG C. A preferred X-ray resist is poly (1,3-hexadiene sulfone). A method of synthesizing poly (diene sulfones) is disclosed, in which a diene monomer is dissolved in a molar excess of a nitroalkane at low temperature, for example in a molar excess of dried 2-nitropropane in a -78 DEG C. dry ice/acetone bath, and reacted with a molar excess of sulfur dioxide in the presence of a free radical initiator such as tert-butyl-hydroperoxide.
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申请公布号 |
US5922518(A) |
申请公布日期 |
1999.07.13 |
申请号 |
US19960757218 |
申请日期 |
1996.11.27 |
申请人 |
BOARD OF SUPERVISORS OF LOUISIANA STATE UNIVERSITY AND AGRICULTURAL AND MECHANICAL COLLEGE |
发明人 |
DAVIES, JACK D.;DALY, WILLIAM H. |
分类号 |
G03F7/039;G03F7/20;(IPC1-7):G03F7/20;G03C5/16 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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