| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device in an integrated process for making a self-aligned borderless contact of the element and a self-aligned local interconnection of the element. SOLUTION: A substrate 30 having a plurality of shallow trench insulating layers 31 is formed, first and second gate electrodes are respectively formed on a locally interconnected region 9" and an active region 9', source and drain regions 36 are formed through ion-implantation in the substrate 30 with the use of these first and second gate electrodes as masks, first spacers 37a, 37b and second spacers 37c, 37d are respectively formed at the peripheries first, and the second gate electrodes and the exposed parts of gate oxide films are removed. Self-aligned silicide films 42a to 42c are respectively formed on the surfaces of the regions 36, second insulating layers are formed, dielectric layers 35a,... are respectively formed on the second insulating layers and for making a self-aligned borderless contact and making a self-aligned local interconnection, a first opening is equipped on the region 9" and a second opening is equipped on the region 9'.
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