SEMICONDUCTOR STORAGE AND DATA PROCESSOR

摘要

PROBLEM TO BE SOLVED: To quicken memory access. SOLUTION: A semiconductor storage containing a plurality of word lines and a memory cell connected to them is provided with a first driver circuit (DPE) that is formed by a transistor having a high breakdown voltage and selectively drives a corresponding word line to write data to the memory cell, and a second driver circuit (DR) that is formed by a transistor with higher driving capability than a transistor constituting a high breakdown voltage driver and selectively drives the word line to read the data from the memory cell, thus speeding up word line selection when reading data.