METHOD AND DEVICE FOR FORMING PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a pattern forming method for realizing the patterning of the scale of not more than several tens nanometers on a resist film with sufficient thickness with which the defect of a pin hole is difficult to occur. SOLUTION: Resist 14 or a thin film are applied onto a substrate 10 and a probe 1 whose tip is sharpened is brought into contact with resist 14 or the thin film. Contact force between the probe 1 and resist 14 or the thin film is controlled so that the contact force of more than the plastic deformation yield point of resist 14 or the thin film operates between the probe 1 and the thin film and it relatively moves the probe 1 and the substrate 10, and the resist 14 or the thin film are plastically deformed and directly patterned.