| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a fine device, which can be made high in alignment with an IC manufacture line and can easily protect circuit parts at the time of sacrificial etching. SOLUTION: In a manufacturing method, the part of an embedded insulating film provided within a substrate is etched and removed, to form a structure opposed to a surface of the substrate as spaced therefrom. The embedded insulating film is an insulating film 410 obtained by thermally jointing two insulating films 401 and 403, the jointed part having a jointed interface into which etching chemical species penetrate faster than in a bulk thermal oxidized film. When the two insulating films are thermally jointed with each other, the penetration rate of etching chemical species into the jointed interface is faster than that into the conventional bulk thermal oxidized film, so that the etching advances at the same time through a large area, whereby the etching rate can be increased drastically over that in the prior art. As a result fine structures can be formed without causing damages to circuit pars.</p> |
