| 摘要 |
<p>PROBLEM TO BE SOLVED: To attain the high speed of responses by forming an organic insulating film on a peripheral part including partition line areas other than display screen areas being on a substrate including transparent electrodes to prevent the leakage fault between a switching element substrate and a counter substrate. SOLUTION: A thin film transistor(TFT) is constituted of a gate electrode 4, a gate insulating film 5, a semiconductor layer 6, a source electrode 8 and a drain electrode 9 and this TFT functions as a switching element. On a counter substrate confronting with the switching element substrate of these switching elements, color filters 14a are formed on the insulative substrate 13 of glass or the like and black filters 14b are formed on parts corresponding to areas where pixel electrodes 10 are not formed. Transparent electrodes 15 consisting of ITO or the like are formed on the whole surface on the counter substrate including these color filters 14a and the black filters 14b. Moreover, on the counter substrate, organic insulating film 16 made up of photosensitive resin material or the like is formed on the peripheral area part including the partition line areas other than display pixel areas.</p> |
