发明名称 SEMICONDUCTOR LASER WITH KINK SUPPRESSION LAYER
摘要 A kink suppression technique is disclosed in which optical characteristics of a distributed feedback laser diode's resonant cavitiy are controlled to preferentially prevent establishment of higher order lateral modes. This results in increased kink powers and thus the useful power range of the device. Specifically, an optical layer, preferably silicon or titanium, is disposed along the optical axis, on the etched upper cladding layer, and on both sides of the ridge.
申请公布号 CA2316830(A1) 申请公布日期 1999.07.08
申请号 CA19982316830 申请日期 1998.12.18
申请人 LASERTRON 发明人 BOWLER, DENNIS P.
分类号 H01S5/20;H01S5/22;H01S5/223;(IPC1-7):H01S3/19 主分类号 H01S5/20
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