| 摘要 |
<p>High-purity Si can be prepared by heating solid SiO to a temperature of 1000 °C or above but below 1730 °C to convert the solid SiO into liquid or solid Si and solid SiO2 through disproportionation, and separating the Si thus formed from the SiO2 and/or SiO. The solid SiO to be used as the starting material can be prepared by heating a mixture of one or more members selected from among carbon (C), silicon (Si) and ferrosilicon with SiO2 to generate a gas containing gaseous SiO, and cooling the gas to form solid SiO.</p> |
