摘要 |
<p>A semiconductor integrated circuit device comprises a MOSFET. The operating speed is suitably harmonized with the increase of the power consumption by the leak current of the MOSFET. Along signal paths, of the signal paths in the semiconductor integrated circuit device, having margins for delay of signals propagated through the paths, MOSFETs having high threshold voltages are provided, and along signal paths having no margin for delay of signals propagated through the paths, MOSFETs having a low threshold voltage, a large leak current and a high operating speed are provided.</p> |