| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element in which formation of a GaN based semiconductor layer is acilitated by interposing a Zr butter layer of specified thickness between the GaN based semiconductor layer and the specific face of an Si substrate. SOLUTION: A buffer layer 22 of 22 having thickness of 0.01-10 μm is formed (on the (111) face of an Si substrate 21) between an Si substrate 21 and a semiconductor layer (n clad layer) 23. Consequently, c-axis orientation can be ensured at least on the upper face (where a GaN based semiconductor layer is formed) of the buffer layer 22. More specifically, a substrate and a Zr mass are deposited in the chamber of an EB deposition system and then the chamber is evacuated to 1×10<3> Torr or below. Subsequently, nitrogen gas purge is repeated three times and the chamber is evacuated again to 8×10<3> Torr or thereabout while sustaining the temperature of the substrate 21 at about 150 deg.C. Finally, Zr is deposited on the (111) face of the substrate at a rate of 3-5 pr/sec by electron beam method. |
