| 摘要 |
PROBLEM TO BE SOLVED: To miniaturize a dynamic semiconductor device, reduce its weight, and improve productivity by forming a non-volatile storage element for setting the state of a redundant circuit at the dynamic type semiconductor device. SOLUTION: A non-volatile storage element that is used instead of a fuse allows a gate 1 for constituting an N-channel-type MOS transistor to be electrically connected to a stack polysilicon 2 that is used as the recharging node of a dynamic memory cell and forms the gate 1 and the stack polysilicon 2 as an electrically floated state. Also, a polysilicon 4 that is used as the charging node of the dynamic memory cell is formed as a second gate via an insulation film 3. The polysilicon 4 is connected to a metal electrode 7, a drain 5 for constituting the N-channel MOS transistor is connected to a metal electrode 8, and similarly a source 6 for constituting the N-channel MOS transistor is connected to a metal electrode 9. |
