Flash memory with tunnel insulation films

摘要

A number of gate insulation films, control gate lines (35), and gate cap insulation films are stacked in this order, lie on the floating gates (33) and are zig-zag shaped for different spacing. Source regions are formed at spots where the control gate lines extend near each other. Drain regions are formed in zig-zag shape at spots of wider spacing of the control gate lines. Source contact regions (47) expose the source regions. A first flat line is formed on substrate surface in contact with source region, while bit line contact regions (48) expose the drain regions. A second line (46) extends orthogonally to the control gate lines and contacts the bit line contact regions.