发明名称 |
Semiconductor component with first conductivity semiconductor substrate |
摘要 |
On the semiconductor substrate (1) is formed a first semiconductor layer (3), in which is formed a second diffusion layer (4) of second conductivity, coupled to the first diffusion layer (2). The first semiconductor layer carries a second semiconductor layer (20). The second semiconductor layer is insulated from the substrate by the two diffusion layers. The first semiconductor and second diffusion layers are laminates of several layers, with the second laminate of second conductivity with its layer formed in each layer of the first layer laminate.
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申请公布号 |
DE19857852(A1) |
申请公布日期 |
1999.07.01 |
申请号 |
DE19981057852 |
申请日期 |
1998.12.15 |
申请人 |
SONY CORP., TOKIO/TOKYO, JP |
发明人 |
YOSHITAKE, NOBUYUKI, TOKYO, JP |
分类号 |
H01L29/73;H01L21/331;H01L21/74;H01L21/761;H01L21/8222;H01L21/8236;H01L21/8249;H01L27/06;H01L27/088;H01L29/732;(IPC1-7):H01L29/735;H01L29/78;H01L21/336 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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