| 摘要 |
PROBLEM TO BE SOLVED: To determine discharged reacted and unreacted by-products, to quantitatively derive the reaction efficiency of a chemical vapor growth reactor and to continuously determine the growth rate and thickness of thin films by measuring the gaseous compsn. in the outlet of reactor and determining the reaction part ratio of a precursor material from the gaseous compsns. in the inlet and outlet of the reactor. SOLUTION: The carrier gas from a gas cylinder 20 passes through a mass flow rate controller 24, then through the precursor material in a foam box 22, picks up the precursor material and flows from a head gap 23. The dilute stream of the gas carried to the mass flow rate controller 24 by a parallel circuit is mixed with the gaseous stream and is introduced to the reactor 10 where the thin films are grown on a substrate 30. At this time, the gaseous mixture is passed through an acoustic cell 40 near the inlet port 16 of the reactor 10 and the compsn. is calculated. As a result, the compsn. of the gaseous mixture may be controlled. Simultaneously, the compsn. of the gas to be discharged is calculated by an acoustic cell 50 near the outlet port 18 of the reactor 10 and the reaction part ratio is determined from the compsns. of both gases. |
