| 摘要 |
PROBLEM TO BE SOLVED: To make thin an optical semiconductor chip without deteriorating functions that the optical semiconductor chip originally has by allowing a semiconductor lamination part to adhere to an alternative support material that differs from a substrate used for its crystal growth and eliminating the substrate from the semiconductor lamination part. SOLUTION: A plurality of semiconductor layers 3a-3d are crystal-grown on the surface of a GaAs substrate 5, thus manufacturing a semiconductor lamination part 3 that becomes a light-emitting diode. Then, a metal with luster is formed on the surface of the GaP film 3d on the uppermost layer of the semiconductor lamination part 3 by vapor deposition, a light reflection layer 2 is created, and a conductive and flexible, alternative support material 1' is allowed to adhere to the entire surface of the light reflection layer 2 by an adhesive. Then, the GaAs substrate 5 used for crystal growth is eliminated from one surface of the semiconductor lamination part 3 by etching. Then, the surface of the n-type InGaAlP layer 3 located on the uppermost layer of the semiconductor lamination part 3 is roughened, thus forming a metal electrode. |
