发明名称 Sputter target for eliminating redeposition on the target sidewall
摘要 An improved sputter target and shield eliminate redeposition of sputtered material onto the target and prevents the formation of deposits on the electrically insulative member between the target and enclosure wall. The sputter target is designed to allow the plasma to sputter the entire sidewall of the target while the a narrow passage between the target, backing plate and shield protects the insulative member from line-of-sight deposition, prevents formation of a plasma within the passage without causing arcing between the backing plate and shield. The target of the present invention is generally disk-shaped with a sloped or frustoconical sidewall surface around the perimeter edge.
申请公布号 US5914018(A) 申请公布日期 1999.06.22
申请号 US19960702823 申请日期 1996.08.23
申请人 APPLIED MATERIALS, INC. 发明人 FU, JIANMING;VAN GOGH, JAMES
分类号 C23C14/34;H01J37/34;H01L21/203;(IPC1-7):C23C14/34 主分类号 C23C14/34
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