| 摘要 |
The process includes use of a plasma to create the required layer of material. The procedure includes depositing an electrically resistive layer (4) on an insulating substrate (1) within a plasma atmosphere. The atmosphere consists of a gaseous mixture of a first silicon based gas, a second doping gas and a third etching gas. The complete strain gauge consists of a base (2), a first layer (3) of electrically insulating material deposited on the base, and a second layer (4) mentioned above, consisting of micro-crystalline P-doped silicon material. Connections are formed for electrical connection to this second layer. The plasma required for this process is achieved by excitation of the gaseous mixture using either radio frequency signals, microwaves, or an auxiliary plasma.
|
